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With the aim to identify an appropriate low-temperature surface passivation process that could be used for bulk lifetime estimation of high resistivity (HR) (>1 kOmega-cm) silicon for radiation detectors, different candidate passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic Czochralski (MCZ) and HR float zone (FZ)) substrates. Minority carrier lifetime...
N-in-N microstrip radiation detectors have been fabricated at the IMB-CNM facilities on standard float zone, diffusion oxygenated float zone and magnetic Czochralski silicon substrates. A first electrical characterization shows that the devices have a good behavior, with low leakage currents and an average full depletion voltage of 55 V for the devices processed on float zone silicon and 330 V for...
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