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Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed...
The properties of LDMOSFETs with dielectric material (several pieces of STI) being inserted into the drift region of the transistor to modulate the one-dimensional electric field distribution are demonstrated. Although this structure increases the turn-on resistance slightly, it also increases the breakdown voltage (BV) by a larger percentage. Systematic experimental results verify that the breakdown...
One chip solution for SMPS (switch mode power supply) has been drawing great attention of the designers with its green mode standby power and high efficiency in the AC-DC adaptor and LED lighting applications. The UHV (ultra-high voltage) foundry process, which enables the integration solution for green compliance SMPS, is proposed in this paper. The technology integrated low voltage CMOS (5 V), medium...
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