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To stack Ge quantum dots (QDs) in a multilayer structure without undesirable enlargement of the QDs, the effects of both Si1−xCx spacer on a strain compensation of the embedded QDs and a sub‐monolayer (ML) carbon (C) mediation on a formation of the Volmer‐Weber (VW)‐mode Ge QDs on the Si1−xCx spacer were investigated. In a Si1−xCx/Ge/Si(100) structure, lattice rexation of the embedded QDs was kept...
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