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This paper reports a 3-dimensional (3D) micro-optical coupling system for improving coupling efficiency in the Littrow configured micro-electro-mechanical system (MEMS) tunable lasers. In the coupling system, an optical fiber acts as a rod lens for light convergence in the vertical plane, while a deep-etched silicon parabolic mirror confines the light in the horizontal plane. Compared with previous...
We report a SOI based 1×4 coarse wavelength-division-multiplexer (CWDM) planar concave grating multiplexer/demultiplexer and applications in re-configuration optical add/drop multiplexer (ROADM) system. For design, we employed recursion numerical method to build a low aberration, non-circle grating circle model of concave grating. For experiment, CMOS compatible silicon planar integration technology...
By leveraging on the wealth of Si-CMOS technology know-how and the largely available infrastructures, the fundamental photonic device building blocks and circuit integration platform, essential for the realization of the electronic-photonic integrated circuit (EPIC), have been successfully developed. This presentation gives an overview on the current status of this critical technology and provides...
We propose optical switches in which the heater is fabricated directly on the slab region of the rib waveguide. Two types of Heater-on-Slab (HoS) switches were investigated. In the first type, the silicon slab regions are doped highly to form the heaters. For this type of switches, the switching power is ~85 mW and the switching time is ~27 μs. In the second type, a strip of metal in direct contact...
This paper reports a compact silicon-based thermo-optic switch using photonic wire waveguides. The switch is constructed in Mach-Zehnder interferometer (MZI) configuration on a silicon substrate. The switching operation is achieved through thermo-optic effect. In the experiments, an extinction ratio about 25 dB at the wavelength of 1590 nm is obtained. The switching power is around 180 mW.
Recently, Ge has been intensively studied as a light emission material that emits at ~1.5 μm, as it has been theoretically proven to be a promising candidate to realize Si-based light source for on-chip and chip-to-chip communications. In this paper, photoluminescence (PL) is reported from heavily phosphorus (P)-implanted epitaxial Ge thin films on Si. Sheet resistance has been measured to characterize...
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