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This paper presents three different topologies of low phase noise BAW-based oscillators centered at 2.1 GHz. Two single-ended topologies: a common-base and a colpitts, as well as a colpitts differential topology have been achieved. Measurement shows that the single-ended topology is more sensitive to power supply noise, this results in an advantage for the differential topology that exhibits a phase...
This paper describes the design and the realization of a 2.1 GHz ultra low phase noise oscillator using BAW resonator and fabricated in BiCMOS technology. The oscillator is intended for a chip scale atomic clock (CSAC). Based on the Colpitts topology, two circuits have been designed and realized. These circuits can achieve a phase noise better than -83 dBc/Hz at 2 kHz offset, consume less than 10...
A double-lattice BAW filter with balanced input and output is designed with a center frequency of 2.14GHz. The filter is integrated directly above a 0.25/spl mu/m BiCMOS RF IC. Insertion loss of -3dB and out-of-band rejection better than -50dB are achieved. An integrated LNA comprising two broadband amplifiers and one BAW filter is also presented.
The feasibility of a fully integrated RF front-end using an above-IC BAW integration technique is demonstrated for WCDMA applications. The circuit has a voltage gain of 31.3dB, a noise figure of 5.3dB, an in-band IIP3 of -8dBm and IIP2 of 38dBm, with a total power consumption of 36mW. The BAW filter area is 0.45mm/sup 2/ and the total circuit area including the BAW filter is 2.44mm/sup 2/.
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