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Resistive random access memory (RRAM) devices are considered as one of the most promising candidates for the next generation of high-density non-volatile memories (NVMs). In this work, NiO RRAM devices were fabricated by DC magnetron sputtering. With the changing of the annealing time, different switching properties of RRAM were observed. When the sample annealed for 10min, the device displayed a...
This paper describes the application and experimental method of acoustic emission (AE) for the multidirectional filament wound composite material tubes (MFWCMT) .Under compressive fatigue loading and presents the features of acoustic emission during compressive test process for MFWCMT. The experiment results show that the AE parameters can elaborate the failure mechanism of inner deformation of the...
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