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Epitaxial predominantly phase-pure Ti 7 Si 2 C 5 thin films were grown onto Al 2 O 3 (0001) by reactive magnetron sputtering. The c-axis lattice constant is ∼60.2Å; the Ti 7 Si 2 C 5 unit cell comprises alternating Ti 3 SiC 2 -like and Ti 4 SiC 3 -like half-unit-cell stacking repeated three times. Elastic...
V 2 GeC MAX-phase thin films were deposited by DC magnetron sputter epitaxy in the temperature range 450–850°C. The MAX-phase nucleates directly on (000l)-oriented sapphire-wafer substrates without the need for a seed layer. The films contain, however, a small fraction of binary vanadium carbide (VC x ) inclusions. X-ray diffraction analysis furthermore shows that these inclusions...
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