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The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013–1015ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29×10−6Ωcm2. The value of ρc increased significantly at...
Thin films of nickel germanide conveniently form at the relatively low temperature of 300C in a matter of minutes and at even lower temperatures over a longer time. Here we report on the formation of NiGe on crystalline germanium substrates at low temperatures (less than 300C). Ni films deposited on Ge substrates formed NiGe by heating the samples in an atmosphere nearly void of oxygen. Ni films of...
We present the experimentally determined specific contact resistivity of as deposited nickel to highly doped n-type 3-C silicon carbide using a novel test structure. The specific contact resistivity, extracted using this test structure and the corresponding methodology, is (0.8–5.7)×10−6 Ω·cm2•
Diamond films were implanted with Au or O ions at multiple energies in order to produce a uniform region of C vacancies. Analysis of the implanted films by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased with dose (5x10 13 to 5x10 15 ions/cm 2 ). For implantation with Au ions, a complete amorphization near to the surface...
Ohmic contacts to p-type In1-x GaxAs/InP with an intermediate superlattice region have been examined for use in InGaAs/InGaAlAs/InP lasers. Four metallizations (Pd/Zn/Pd/Au, Pd/Mn/Sb/Pd/Au, Ni/Zn/Ni/Au and Au/Zn/Au) were evaluated in these contacts for the first time. All of the metallizations exhibited a low resistivity, a smooth surface morphology and thermal stability. However, the Pd/Zn/Pd/Au...
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