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New techniques to fabricate highly doped p-type and n-type crystalline-Si (c-Si) layers at relatively low temperature were applied to solar cell devices. A very thin n-type emitter is formed by exposing phosphine (PH3) gas on c-Si surface around 600 °C. PH3 molecules can react with dangling bonds on the surface, and incorporate into shallow region in c-Si bulk. This thin doped layer is expected to...
Epistemic Programming has been proposed as a new programming paradigm for scientists to program their epistemic processes in scientific discovery. As the first step to construct an epistemic programming environment, this paper proposes the first epistemic programming language, named ‘EPLAS’. The paper analyzes the requirements of an epistemic programming language, presents the ideas to design EPLAS,...
We report on successful control of the growth of dendrite crystals to suppress dislocation generation in practical size multicrystalline silicon ingots by modifying the growth condition. Local temperature distributions and gas flow above silicon melt surface were controlled by utilizing additional heat insulators and carbon components in a furnace. The size, positions and shapes of the insulators...
We demonstrate an improved annealing procedure to suppress defect generation during impurity gettering process. A multiple cycled annealing and cooling for impurity gettering provides higher carrier lifetime in the wafers compared with continuously annealed wafers (conventional method). Microscopic photoluminescence images revealed that dislocation propagation from grown-in dislocations and defect...
In order to develop a high-gain ultraviolet (UV) detector with low operation voltage and low fabrication cost, a photodetector that consists of a diamond cold cathode and selenium-based photoconductive film was proposed. It was confirmed that the illumination of UV light increases field emission current with a fixed applied voltage, proving that the prototype photodetector can detect UV light.
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