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High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2–4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to...
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