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An aggressive junction design concept is proposed for further scaling of bulk planar CMOS featuring selectively epi-grown raised source/drain extensions (RSDext) in conjunction with high temperature millisecond annealing (MSA) process and carbon co-implantation. The junction design window enlarged by introducing the RSDext enables us to elaborately control slight "intentional" diffusion...
An aggressive junction design concept is proposed for further scaling of bulk CMOS featuring selective epi-growth raised source/drain extentions (RSDext) in conjunction with high temperature millisecond annealing (MSA) process. The junction design window enlarged by introducing the RSDext enables us to perform elaborate control of slight ldquointentionalrdquo diffusion onto the MSA process rather...
We found that the relatively low temperature millisecond annealing at S/D activation for nFET is enhanced the co-implanted halo activation regardless of sequence of MSA and spike-RTA. Tilt-and-twist extension implantation technique with millisecond extension annealing for pFET was also performed to reduce the parasitic resistance. By combining these technique, an aggressively scaled high-performance...
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