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We studied radiation tolerance of pn junction 6H-SiC (silicon carbide) diodes on electrical properties and detector performance for alpha particles. Three pn-SiC diodes were irradiated with gamma-rays at doses ( 60 Co source) up to 2.5MGy and two diodes were irradiated with beta-rays (2MeV) at fluences up to 1×10 15 electrons/cm 2 . The ideality factors η, which are estimated...
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