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A new yet simple approach, VD,sat method, without complicate temperature measurement setup, has been developed to investigate the carrier transport characteristics for MOSFET devices in the quasi-ballistic regime. It has shown quite good matches with that of Temperature Dependent Method (TDM) developed from the quantum theory. For the first time, the carrier transport properties after HC stress were...
The dopant and thermal interaction on solid phase epitaxy (SPE) formed SiC has been investigated. We have studied the impact on substitutional carbon concentration ([C]sub) from various thermal steps including low temperature anneal, SiGe epitaxy thermal budget, RTP, and laser anneal (LSA). Regarding the integration scheme for implementing embedded SiC (eSiC) S/D on NMOS performance enhancement, both...
A Novel strained nMOSFET with embedded Si:C in S/D extension stressor (Si:C S/D-E) was presented. Comparing to the bulk device, it revealed good drive current ION (+27%), high ID,sat current (+67%), enhanced channel mobility (+105%), at a lower effective substitutional carbon concentration (C%=1.1%), using the poly-gate 40 nm-node Si:C/eSiGe S/D CMOS technology. Moreover, PBTI effect was first observed...
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