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Smooth and vertical facets for InGaN/GaN double heterostructure lasers grown on sapphire substrate are formed via a two-step method of dry etching and wet chemical etching. This two-step process consists of an inductively coupled plasma (ICP) etching with Ni metal as an etching mask to define the cavity length of the laser bars, followed by crystallographic wet etching in AZ400K developer to reduce...
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