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We report a novel stress-induced method to grow single crystalline Bi2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi2Te3 nanowires were found to grow on as-sputter ed BiTe films after thermal annealing at 350??C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating...
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