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Molecular beam epitaxy, using a radio frequency nitrogen plasma source, was investigated for the direct growth of GaN thin films on vicinal (001) GaAs substrates. It has been found possible to grow GaN thin films with various types of crystal structure. Cubic (001) GaN with epitaxial relationship to the GaAs substrate could be grown without GaAs nitridation and under stoichiometric N/Ga flux ratio...
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