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On page 5576, Xuefeng Guo and co‐workers combine molecular engineering and chemical self‐assembly with materials fabrication to achieve air‐stable solution‐processable oligothiophene‐based field‐effect transistors with a mobility of up to 6.2 cm2 V−1 s−1, which ranks the highest among oliogthiophene‐based semiconducting materials.
Molecular engineering and chemical self‐assembly are combined with materials fabrication to achieve air‐stable solution‐processable oligothiophene‐based field‐effect transistors with mobilities up to 6.2 cm2 V−1 s−1, which ranks as the highest among oliogthiophene‐based semiconducting materials.
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