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The magnesium phthalocyanine (MgPc) based Schottky diodes are fabricated using four inorganic semiconductors (n-GaAs, n-Si, p-InP, p-Si)by the spin-coating process at 2000rpm for 1min. Their microelectronic and photoelectrical parameters are investigated from the current-voltage I–V characteristics measurements at room temperature in dark and under light. The ln I–V plots, Cheung and Norde methods...
The fabricated Ag/MgPc/n-GaAs/Au-Ge Schottky diode is investigated by using the electrical parameters obtained from the current–voltage (I–V) characteristics measurement at room temperature under dark and light conditions. The Cheung and Norde methods with the I–V characteristics are used to calculate and extract the Schottky diode parameters under dark and light (100mW/cm2) comprising ideality factor...
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