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The research of the high Al(x = 0.75) component has always been the focus of the AlGaN solar‐blind ultraviolet (UV) detector. However, due to the lattice and thermal mismatch between the AlGaN and the underlying substrate under existing mainstream heteroepitaxial growth methods, the large density of defects, e.g., point defects, screw dislocations, and edge dislocations, has hindered the performances...
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