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Short pulse operation in semiconductor disk lasers (SDLs) is regularly achieved by passive mode-locking using semiconductor saturable absorber mirrors [1, 2]. Mode-locking using active techniques is generally prevented by the high losses induced by the standard waveguide-type modulators that cannot be adopted by the disk laser cavity due to the relatively low single-pass gain. Here we report an actively...
Novel 1310 nm and 1550 nm optically pumped VECSELs based on wafer fused InAlGaAs/InPAlGaAs/GaAs gain mirrors demonstrate high CW fundamental mode continuous wave output in excess of 2 W at room temperature.
The authors demonstrate up to 4.35 W output power from a Stranski-Krastanow grown quantum dot semiconductor disk laser (SK-QD SDL), representing a 15 times increase in power from the previous published maximum power in the work of Germann et al. (2008), and the first multi-Watt output from any QD SDL. The experimental demonstration of a multi-Watt power level continuous wave operation of QD based...
We report on the intracavity frequency-doubling of a GaInNAs/GaAs disk laser. The laser operated at 1220 nm and delivered 4.6 W of power at ~610 nm. The red emission was further frequency-doubled to 305 nm.
A novel 1550 nm optically pumped VECSEL based on wafer fused InAlGaAs/InPAlGaAs/GaAs half cavity shows a high CW output of 2.28 W at room temperature and 250 mW at 75degC.
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