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The characteristics of p-channel Ge/Si hetero-nanocrystal based MOSFET memory have been investigated numerically considering mainly hole-tunneling process. Owing to the advantages of a compound potential well and a higher band offset at the valence band compared with the p-channel Si nanocrystal based MOSFET memory and n-channel Ge/Si hetero-nanocrystal based MOSFET memory, the present structure shows...
The electron storage characteristics of Ge/Si hetero-nanocrystal metal-oxide-semiconductor field-effect transistor memory are investigated by computer simulation. Owing to the Ge/Si hetero-energy bands, the retention time increases several orders compared with that of Si nanocrystal memory, and the programming time achieves the order of μs. The trade-off between the high-speed programming and the...
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