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This paper describes the effect of thickening Au-plated ohmic electrodes in AlGaN/GaN HEMTs on the drain current and on-resistance. By increasing the thickness of Au-plated ohmic electrodes up to 5 µm, the fabricated AlGaN/GaN HEMT with a total gate width from 2 to 10 mm exhibited an increase in the maximum drain current by about 50 % and a reduction in the on-resistance by more than 40 %.
In this paper we have investigated the relationship between off-state breakdown voltage and gate-to-drain distance (Lgd) for AlGaN/GaN HEMTs fabricated on a free-standing GaN substrate. The off-state breakdown voltage exhibited a linear increase up to Lgd of around 80 µm but saturated at about 4000 V when Lgd > 80 µm. Therefore, we proposed that when Lgd < 80 µm, the breakdown voltage of HEMTs...
This paper presents the design, fabrication and characterisation of a high performance 4H-SiC normally-off, trenched and implanted vertical junction field-effect transistor (VJFET). Devices with different trenched mesa widths were designed and their performance investigated. The fabricated VJFETs demonstrated a 3.9Omega resistance at VG=5 V (with negligible gate current) and JD=154 A/cm2, corresponding...
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