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Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation significantly increases hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowire. However, our previous studies found that the sensitivity of an SGOI nanowire is degraded as the Ge fraction increases over 20%, because of the surface state of SiGe is unstable when the Ge fraction...
Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process can enhance the mobility of hole carrier and then improve the nanowires's conductance. In this study, we discuss SiGe nanowire structural effect by...
Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation significantly increases hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowire. However, our previous studies found that the sensitivity of an SGOI nanowire is degraded as the Ge fraction increases over 20%, because of the surface state of SiGe is unstable when the Ge fraction...
Ge condensation offers an attractive way to increase Ge the fraction of Ge in SGOI. From authors' previous investigations, increasing the fraction of Ge increases the sensitivity of the SiGe nanowire sensor. To understand how Ge condensation on an SGOI nanowire sensor helps to optimize the conditions of oxidation and improve the sensitivity of the sensor, the effect of oxidation gas and SiGe/α-Si...
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