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A radio frequency power amplifier microwave monolithic integrated circuit with a series LC resonant circuit as well as a bias control circuit for wide-band code division multiple access application is presented. The linearizer that consists of a series LC resonant circuit and base-emitter junction of a bias transistor operates as a diode rectifier circuit. A comparison between the circuits with and...
An RF power amplifier (PA) for IEEE 802.11g WLAN terminals is implemented with 33 GHz-fT, 0.8-mum-SiGe bipolar technology. This paper demonstrates a linearizer consisting of a varactor diode and a base-emitter junction diode of a bias transistor. Intermodulation distortion (IMD) is suppressed by optimized impedance of the linearizer. The reactance of the varactor diode is minimized at low output power...
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