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Normalized Differential Conductance Spectroscopy (NDCS) has been used to investigate the tunneling properties of post soft breakdown SiO2. It is shown that the NDCS is capable of separating various components of tunneling current and determining its corresponding tunnel constants of post SBD SiO2. Therefore, the most important tunneling parameters: the effective mass of tunneling electron in SBD SiO...
The impact of stress and recovery condition on the recovery of an ultrathin oxynitride p-MOSFET under negative-bias temperature instability (NBTI) stress was investigated in this paper. The positive SiO2 bulk trap detrapping and the relaxation of Si/SiO2 interface state was studied through the single point Idlin (drain current) and NFBSILC (near flat-band stress induced leakage current) measurement...
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