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A fully integrated 24-GHz 22-dBm power amplifier was designed and fabricated in 0.18-µm CMOS technology. Optimized device size selection and resonance matching techniques are adopted in this single stage power amplifier design. High pass matching circuit is used to reduce output losses and maintain gain flatness. The measurement results shows a 22 dBm of saturation power and 20 dBm of output power...
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