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Electroabsorption properties of 1.3mum InAs/InGaAs/GaAs quantum dot electroabsorption modulator (EAM) are investigated. Onset of absorption to higher electric field suggests the potential to achieve higher optical power handling capability than conventional EAM.
In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mum InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20degC to 60degC. The highest output power of 0.435 mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of...
InAs(N)/GaAs quantum dots were studied by x-ray diffraction, photoluminescence (PL) spectra, and atom force microscopy. Complicated blue shift in the PL peak energy with increasing nitrogen concentration was observed. This shift arises from the quantum size effect in the quantum dots, which dominates the nitrogen induced reductions of the InAsN band gap.
The effects of growth temperature on the optical properties of InAs/InGaAs/GaAs quantum dot (QD) structure were investigated at the important temperature range of 25degC to 80degC. Results from QD samples grown at low growth temperature of 450degC suggest better thermal stability as compared to that grown at 510degC. This work suggests the feasibility of obtaining better thermal stability at a low...
High areal density (1.4times1011 cm-1 ) and broad spectral width (136 nm) were obtained from the optimized InAs quantum dot sample. These results will contribute to an improvement in the performance of the current quantum dot superluminescent diodes.
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