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The hydrogen plasma characteristics in an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system has been investigated using a Langmuir Probe and optical emission spectroscopy (OES). Our results show that the electron energy drops sharply as the microwave power increases from 200 to 400W, except at the center of the chamber. It remained relatively unchanged from 400 to 1000W, and...
The deposition of a- and DLC-C films from a mixture of hydrogen and methane using electron cyclotron resonance chemical vapour deposition (ECR-CVD) plus radio-frequency (RF) bias is reported. The structural characteristics of the DLC films were studied using Raman spectroscopy. The effects were investigated of the self-generated DC bias, resulting from application of RF power, on the optical gap,...
Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance plasma chemical vapour deposition (ECR-CVD) method from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The tubular vessel used had a substrate receiver circular area of 87 cm 2 and was fitted with magnetic coils to guide the microwave power into the deposition section...
This paper reports the deposition of hydrogenated silicon carbide (SiC:H) films using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas. The effects of changing the phosphine fraction on the optical bandgap, activation energy and conductivity...
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