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In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mum InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20degC to 60degC. The highest output power of 0.435 mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of...
The 1.3 mum InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar electrodes configuration were fabricated. The lasing wavelength is around 1273 nm. The typical threshold current is lower than 6 mA. The output power of 0.9 mW with slope efficiency of 0.13 W/A has been recorded. Temperature dependence of the L-I-V relationship of InAs QD VCSELs was investigated. High...
The effects of growth temperature on the optical properties of InAs/InGaAs/GaAs quantum dot (QD) structure were investigated at the important temperature range of 25degC to 80degC. Results from QD samples grown at low growth temperature of 450degC suggest better thermal stability as compared to that grown at 510degC. This work suggests the feasibility of obtaining better thermal stability at a low...
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