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In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mum InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20degC to 60degC. The highest output power of 0.435 mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of...
The 1.3 mum InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar electrodes configuration were fabricated. The lasing wavelength is around 1273 nm. The typical threshold current is lower than 6 mA. The output power of 0.9 mW with slope efficiency of 0.13 W/A has been recorded. Temperature dependence of the L-I-V relationship of InAs QD VCSELs was investigated. High...
A self-consistent model comprising rate equations and thermal conduction equation is used to analyze the influence of oxide aperture on thermal properties and output power of 1.3 mum InAs-GaAs quantum-dot (QD) vertical cavity surface emitting lasers (VCSELs). The results show the self-heating effect in QD VCSEL is very sensitive to the size of oxide aperture. The temperature increase at the active...
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