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We report the solid-source molecular beam epitaxial (SSMBE) growth of InAs/InP quantum dots (QDs) superlattices and the effect of As/P exchange. The InAs QDs were found to have an average lateral diameter of ~40nm and density of 3 to 4x10 10 cm -2 . The single-layer QDs have photoluminescence (PL) emission centred at 0.78eV with a linewidth of 64meV at low temperature (4K)...
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