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Hydrogenated amorphous silicon carbide films (a-SiC:H) were deposited using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The effect of the microwave power on the deposition rate was studied, and variations in the photoconductivity and dark conductivity were investigated in conjunction...
Hydrogenated amorphous silicon carbide films (a-SiC:H) were deposited from a mixture of methane, silane and hydrogen, with diborane as the doping gas, using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique. The effect of the microwave power on the deposition rate was studied at two different process pressures (4 mTorr and 8 mTorr), and variations in the photoconductivity...
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