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Raman and photoluminescence (PL) results of Ge nanocrystals prepared from co-sputtered Ge+SiO 2 samples under rapid-thermal annealling (RTA) with different annealing conditions are presented. The Raman results showed a transition from amorphous to nanocrystalline Ge when the samples were annealed at a temperature higher than 700 o C for longer than 300 s. The Raman spectrum of sample...
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