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The effect of photodecomposed phosphine (PD-PH/sub 3/) treatment on the interfacial properties of phosphorus nitride/indium phosphide (PN/InP) metal-insulator-semiconductor (MIS) structures has been investigated. It is demonstrated that PD-PH/sub 3/ treatment is effective in reducing the interface state density for PN/InP MIS diodes fabricated by photochemical vapour deposition (photo-CVD). An interface...
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