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This paper studies the system-level reliability of 16nm MLC NAND flash memories under total ionizing dose (TID) effect. Errors that occur in the parts under TID effect are characterized at multiple levels. Results show that faithful data recovery only lasts until 9k rad. Data errors observed in irradiated flash samples are strongly asymmetric. To improve the reliability of the parts, we study error...
The increasing density of NAND flash memories makes data more prone to errors due to severe process variations and disturbance. The urgency to improve NAND flash reliability encourages searching for optimal channel coding methods. This paper reports our efforts towards a read channel for flash memories using polar coding. Our contributions include the solutions to several challenges raised when applying...
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