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The toggle cell of MRAM needs large current for writing. In this work, the negative pulse scheme for toggle writing is proposed, and the implemented architecture is also described. The scheme can reduce the writing current and improve the toggle yield. A single current source scheme is also designed to provide the symmetrical and bi-directional current
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.