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In this paper, transferred-substrate InP/InGaAs Single Heterojunction Bipolar Transistors (SHBT) are reported. Here, the first RF results showing fT=70 GHz and fmax=110 GHz for a device with 2times10 mum2 emitter and 3times12.5 mum2 collector, are presented. Emphasis is given on the fabrication of the devices with rather simple methods without involving specialized or complicated equipment
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