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We study the optical gain and alpha factor of InAs/InAlGaAs quantum-dash lasers on InP substrate after being subjected to the postgrowth intermixing process. The intermixing was achieved using dielectric capping process that involves the deposition of dielectric film and subsequent rapid thermal annealing. Compared to the un-intermixed laser, we found that the intermixed lasers with a 93 nm bandgap...
We present the development of theoretical model based on multi-population rate equation to assess the derivative optical gain and chirp characteristics from the multiple states broadband InGaAs/GaAs quantum-dots laser. Our results show that the linewidth enhancement factor from the ground state is slightly larger but in the same order of magnitude as the values obtained in conventional quantum-dot...
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