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We have investigated the electronic structure of the Si(111)3x3-Bi surface with 1/3 ML coverage (the α-3-Bi surface) using angle-resolved photoelectron spectroscopy and low-energy electron diffraction. Three occupied surface localized states (SL1, SL2, and SL3) and some other surface related states (DS and SR) were observed. The SL1 band of three prominent surface localized state bands is found to...
By means of angle resolved photoelectron spectroscopy using synchrotron radiation, we have measured the valence band and surface sensitive Si 2p core-level spectra for the Si(111)3 1-Mg surface. The dispersion of the valence band shows the fact that this surface has a semiconducting property and two surface states in the projected bulk band gap at the KK point. From the fitting results of the Si...
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