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Silicon nanowires (SiNWs) have successfully been synthesized by carbothermal evaporation method. By ramping-up the furnace system at 20°Cmin −1 to 1100°C for 6h, the vertically aligned coexist with crooked SiNWs were achieved on the silicon substrate located at 12cm from source material. The processing parameters such as temperature, heating rate, duration, substrate position and location...
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