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Low-voltage amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with thin HfO2 gate dielectric grown by anodic oxidation (anodization) method are investigated. The morphological and electrical properties of the anodized thin HfO2 film are studied. It is shown that the as-grown HfO2 film with an equivalent oxide thickness of 3.8 nm has a low leakage current density of $3.6 \times 10^{-8}$ ...
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