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Spectroscopic ellipsometry (SE) is used to study growth evolution of bottom cell p-type doped and intrinsic hydrogenated silicon (Si:H) layers in p-i-n amorphous/nanocrystalline (a-Si:H/nc-Si:H) tandem photovoltaic (PV) devices. From SE data collected in situ during Si:H growth, crystallite coalescence transitions are identified as well as variations in optical response, in the form of the complex...
Spectroscopic ellipsometry was applied to analyze the roll-to-roll deposition of thin film hydrogenated silicon (Si:H) n-i-p solar cells on back-reflector-coated flexible plastic substrates. Real time SE (RTSE) was used for probing along the substrate center line during deposition, and ex situ SE was used for mapping over the substrate area after deposition. The current work focuses on the topmost...
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