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The √3 × √3R30° reconstructed surface of 6H-SiC(0001) was exposed to N 2 O from 10L to ∼10 6 L at sample temperatures ranging from 500 to 800°C. The Si 2p emission spectra showed fast oxide formation for the first 10L of N 2 O exposure and thicker oxide layer were formed at higher sample temperature. The valence band spectra at different exposures did not change much, which...
Chromium aluminum nitride ((Cr1−x, Alx) N) films have been successfully prepared by pulsed laser deposition (PLD). The (Cr1−x, Alx) N film, which is hard and resistant against wear and oxidation, is one of the most promising pseudobinary nitrides for applications in the protective coatings. The film was synthesized by depositing chromium and aluminum metal vapors in nitrogen. Experiments were carried...
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