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The dependencies of quantum-well (QW) internal quantum efficiency (IQE) and device behaviors on the p-layer thickness in a high-indium InGaN/GaN QW light-emitting diode (LED) are demonstrated. During the high-temperature growths of the p-AlGaN and p-GaN layers, the QWs are thermally annealed to increase their IQEs and blue-shift the emission with increasing p-layer thickness. Meanwhile, the quantum-confined...
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