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1.0 MeV Au + ions were implanted into a Si single crystal and an amorphous silicon film at room temperature. For the case of the Si single crystal, ion implantation was performed at angles of 7, 45 and 60 o , respectively. The amorphous silicon film was deposited on SiO 2 substrate with a thickness of ~500 nm. The longitudinal and lateral distributions of implanted Au ions...
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