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This paper summarises the current state of the art in GaAs MOSFETs, and argues that the 4 decade search for a device quality compound semiconductor oxide is over. Under suitable growth conditions, a GaO/GaGdO high-k (~20) gate dielectric has been shown to have a mid-gap density of states of 2.5 x 1011 cm-2 eV-1 [1], and vitally, an unpinned oxide-semiconductor interface [2]. With a scalable vertical...
Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/ Ga2O3 MOS systems, presents GaAs MOSFET DC and RF data, and concludes with an outlook for high indium content channel MOSFETs. GaAs based MOSFETs are potentially...
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