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The Ni-based self-aligned silicide process has attracted a rapidly growing interest for contact metallization in Si technology, as the device dimensions are scaled down into the sub-100 nm regime. Incorporation of Ge in the electrodes of a MOSFET, i.e. gate and source/drain, in order to further enhance device performance, has made the study of Ni-Si 1-x Ge x interactions...
NiSi 0.8 Ge 0.2 film formed on a strained Si 0.8 Ge 0.2 layer epitaxially grown on a Si(100) substrate wafer is morphologically stable up to 750 o C. The NiSi 0.8 Ge 0.2 film is found to be strongly oriented along its <010> direction. This remarkable stability is thus possibly...
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