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ZnO is a wide band gap piezoelectric semiconductor material with large electromechanical coupling, which has great potential for photoelectronics devices, acoustooptic devices and SAW devices. In this paper, ZnO films were deposited on diamond substrates by RF magnetron sputtering, while the depositing and annealing parameters of ZnO film were optimized. High-purity (99.999%) ZnO target, O2 and Ar...
In this paper, ZnO thin films were deposited on SiO2/Si (100) substrates by radio frequency magnetron sputtering using high purity (99.999%) ZnO target, grown time was 2 h, 4 h and 8 h respectively. After annealing in pure oxygen atmosphere, high-quality ZnO thin film was obtained. X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) were employed to characterize the quality of the films...
ZnO is a wide band gap semiconductor material and has a large electromechanical coupling coefficient. ZnO has great potential for photoelectronic devices, acousto-optic devices and SAW devices. In this paper, ZnO films were deposited on quartz substrates by RF magnetron sputtering, with depositing and annealing parameters optimized through the orthogonality method. High-purity (99.999%) ZnO target,...
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