The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
CdSxSe1–x nanowires with a graded bandgap along the length direction were utilized for field‐effect transistors and Schottky junction solar cells. This novel type of nanowires suggests promising electronic and optoelectronic applications in the future.
Bandgap‐graded CdSxSe1−x nanowires are utilized by Liang Li and co‐workers on page 1109 for high‐performance field‐effect transistors and Schottky solar cells. The photovoltaic mechanism is ascribed to the Schottky junction effect and the “type II” band structure which maximizes the driving force for the injection of photoexcited electrons into the CdS through CdSxSe1‐x from the CdSe by creating an...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.