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The size and asymmetry effects of MOSFET detectors operating in a source‐driven configuration on responsivity are discussed in this paper. Seven MOSFET detectors with different sizes and structures are fabricated in a standard 55 nm CMOS technology. At 2.58 THz, the measurement results show that for the symmetric device, the minimum size MOSFET can achieve a higher responsivity, and for the asymmetric...